RF Noise of 65-nm MOSFETs in the Weak-to-Moderate-Inversion Region

In this letter, the RF noise performance of 65-nm MOSFETs with 60-, 90-, 130-, and 240-nm drawn gate lengths has been extensively investigated in the weak-to-moderate-inversion region for low-power and low-voltage (LPLV) applications. Noise measurements show that although the noise performance is directly related to gate length (Lg), it does not monotonically scale with the inverse of gate length....