Transport Properties Of Electron-Doped La2-Xcexcuo(4) Thin Film In The Under-Doped Region

INTERNATIONAL JOURNAL OF MODERN PHYSICS B(2007)

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摘要
Underdoped electron-doped La2-xCexCuO4 (x=0.06-0.09) thin films were successfully grown and investigated for the transport properties in ab-plane. It was found that the inplane resistivity rho(ab) shows a semiconductor behavior when x=0.06, with increasing the Cc concentration to the optimal doping level, it changes to the two dimensional Fermi-liquid behavior. In the films with x >= 0.08, a Kondo effect like scattering is observed in the low temperature range.
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关键词
underdoped, electron-doped
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