Physical and Electrical Characterization of Metal–Insulator–Metal Capacitors With $\hbox{Sm}_{2}\hbox{O}_{3}$ and $\hbox{Sm}_{2}\hbox{O}_{3}/\hbox{SiO}_{2}$ Laminated Dielectrics for Analog Circuit Applications

IEEE Transactions on Electron Devices(2009)

引用 21|浏览7
暂无评分
摘要
We report the first demonstration of metal-insulator-metal (MIM) capacitors with Sm2O3/SiO2 laminated dielectrics featuring low quadratic voltage coefficient of capacitance (VCC) and high capacitance density for precision analog circuit applications. In comparison with a HfO2 MIM dielectric, the Sm2O3 MIM dielectric is found to show a smaller quadratic VCC and a similar dielectric constant. We als...
更多
查看译文
关键词
MIM capacitors,Capacitance,Electrodes,Leakage current,Capacitors,X-ray scattering
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要