Modeling of Floating-Body Effect in Silicon-on-Insulator Metal–Oxide–Silicon Field-Effect Transistor with Complete Surface-Potential-Based Description
JAPANESE JOURNAL OF APPLIED PHYSICS(2008)
摘要
In this work, a silicon-on-insulator (SOI) metal-oxide-silicon field-effect transistor (MOSFET) model for circuit simulation is reported, which covers also the floating-body effect induced by the additional charge generated through impact ionization. The model is based on the complete surface-potential description and solves the Poisson equation with inclusion of the impact ionization. The developed compact SOI-MOSFET model is verified to reproduce two-dimensional-device simulation results very well, and shows the characteristic potential increase at the back side of the SOI layer. The steep drain-current (I(ds)) increase at high drain-voltages (V(ds)), caused by the floating-body effect, is also accurately captured.
更多查看译文
关键词
floating-body effect,SOI-MOSFET,fully depleted (FD),partially depleted (PD),quasi PD condition,impact ionization,kink current,surface-potential-based model,HiSIM-SOI
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络