Monitoring trapped charge generation for gate oxide under stress [MOS capacitors]

Electron Devices, IEEE Transactions, Volume 44, Issue 9, 1997, Pages 1441-1446.

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Abstract:

A measurement method to extract the respective quantities and centroids of positive and negative trapped charges, i.e., Qp and Qn, generated by the negative current stress for gate oxides is proposed and demonstrated. The method is based on neutralization of and by a low positive current stress to differentiate the effects of Qp and Qn. F...More

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