High-Program/Erase-Speed SONOS With In Situ Silicon Nanocrystals
IEEE Electron Device Letters(2008)
摘要
In this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride...
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关键词
SONOS devices,Nanocrystals,Nonvolatile memory,Silicon compounds,Chaos,Voltage,Tunneling,Fluid flow,Flash memory,Leakage current
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