Physics Of Gaas-Alas Superlattices Under Pressure Application To Sensors

A review of the electrical properties of Si-doped GaAs-AlAs short-period superlattices under high hydrostatic pressure is presented. Firstly, we focus on the study of the deep Si-DX states in the microstructure. Then, we make use of the DX center under pressure to evidence the dopant segregation in planar-doped microstructures and the cation exchange across the GaAs-AlAs interface. Finally, we show how the pressure sensing properties of the AlGaAs alloy are improved in GaAs-AlAs short-period microstructures.