Benefit of NMOS by Compressive SiN as Stress Memorization Technique and Its Mechanism

Chia-Chun Liao,Tsung-Yu Chiang,Min-Chen Lin,Tien-Sheng Chao

Electron Device Letters, IEEE（2010）

引用 11|浏览9

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摘要

In this letter, we certify that the compressive SiN capping layer has more potential than the tensile layer for fabrication using the stress memorization technique to enhance NMOS mobility. The mechanism that we have proposed implies that the conventional choice of the capping layer should be modulated from the point of view of stress shift rather than using the highest tensile film.

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关键词

strain,capping layer,mos integrated circuits,poly amorphization implantation (pai),silicon compounds,nmos mobility,contact etch-stop layer (cesl),sin,stress memorization technique,stress memorization technique (smt),etching,tensile stress,compressive stress,capacitive sensors

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