Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS
APPLIED SURFACE SCIENCE(2004)
摘要
A new technique is proposed for the depth profiling of low energy As and P implants. We show that monitoring the monatomic negatively charged ions of As- and P-, using oxygen backfilling (flooding) in combination with low energy Cs+ sputtering, improves the sensitivity of SIMS profiling and removes the variation of the ion yield at the native oxide/silicon interface. (C) 2004 Elsevier B.V. All rights reserved.
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关键词
SIMS,phosphorus,arsenic,ion beam induced transient effect,depth profile
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