Preparation of GaN-based cross-sectional TEM specimens by laser lift-off.
Micron(2005)
摘要
Laser lift-off (LLO) technology is successfully used to prepare GaN-based TEM cross-sectional specimens. Detailed procedures of the method to prepare the specimens are demonstrated. Large thin areas suitable for TEM analysis were obtained. TEM images of the resulting GaN interface are studied, and the changes in structural quality are confined to approximately the first 250nm of the epilayer. Clear TEM images of the whole epilayer and the InGaN quantum wells and the HRTEM images of the superlattice layer are demonstrated, showing that LLO is a quick and ideal method to study the crystal structure of the epilayer, especially if only the upper layers are of interest.
更多查看译文
关键词
GaN,TEM,Laser lift-off,InGaN LD,HRTEM,Specimen preparation
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络