Surface morphology of GaAs grown by gas-source MBE using trimethylgallium and arsenic

JOURNAL OF CRYSTAL GROWTH, no. 2 (1986): 521-524

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Surface morphology of GaAs on a (100) GaAs substrate grown by gas-source MBE using trimethylgallium (TMGa) and arsenic (As 4 ) was investigated. Surface morphology depends strongly on growth conditions (growth temperature and As 4 /TMGa beam intensity ratio) and two kinds of new surface defects were observed, but there exist no oval defec...More

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