Enhanced Retention Properties Of Pb(Zr,Ti)O-3 Thin Film By Applying Pbtio3 Seed Layer

Reliable ferroelectric 100 nm-thick PZT capacitors for 1.6 V operating FRAM device were successfully developed using MOCVD PZT with a PbTiO 3 seed layer process. PbTiO 3 seed layer process improved the opposite-state retention properties of polycrystalline PZT films by enhancing the (111) texture. We demonstrated that the same sensing-margin of FRAM device was obtained regardless of PbTiO 3 seed layer insertion, while the retention properties were considerably improved.