Electronic Decoupling Of An Epitaxial Graphene Monolayer By Gold Intercalation

PHYSICAL REVIEW B(2010)

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摘要
The application of graphene in electronic devices requires large-scale epitaxial growth. The presence of the substrate, however, usually reduces the charge-carrier mobility considerably. We show that it is possible to decouple the partially sp(3)-hybridized first graphitic layer formed on the Si-terminated face of silicon carbide from the substrate by gold intercalation, leading to a completely sp(2)-hybridized graphene layer with improved electronic properties.
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关键词
raman spectroscopy,epitaxial growth
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