Suppression of Boron Penetration in PMOS by Using Oxide Gettering Effect in Poly-Si Gate
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, pp. 752-756, 1995.
Abstract:
A new stacked poly-Si gate structure with a thin (similar to 20 Angstrom) oxide inserted in-between for p-channel metal-oxide semiconductor feild effect transistor (pMOSFET) application is proposed and demonstrated. Due to the gettering flourine effect of this thin oxide for BF2+-implanted poly-Si gate, the amount of fluorine in the gate ...More
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