A Novel 2-Bit/Cell p-Channel Logic Programmable Cell With Pure 90-nm CMOS Technology

Ying-Je Chen,Chia-En Huang,Hsin-Ming Chen,Han-Chao Lai,J. R. Shih,Kenneth Wu,Ya-Chin King,Chrong-Jung Lin

IEEE Electron Device Letters（2008）

引用 12|浏览18

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摘要

A new p-channel nitride-based one-time programmable (OTP) memory was developed for advanced-logic nonvolatile-memory (NVM) applications. A 0.296-mum2/bit (~35 F2) OTP cell, i.e., 0.592 mum2/cell, with a self-aligned nitride storage node was fabricated using standard 90-nm CMOS processes and is fully independent of gate oxide for high scalability. Additionally, the ultrahigh-density OTP cell exhibi...

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关键词

CMOS technology,CMOS logic circuits,Storage area networks,Nonvolatile memory,CMOS process,Electrons,Logic devices,Scalability,Logic programming,Microelectronics

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