Annealing of In implanted germanium by pulsed electron beam
Nuclear Instruments and Methods in Physics Research(1983)
摘要
Germanium samples were implanted with In around the equilibrium limit solubility (1.5 × 1013 − 1.5 × 1014 at cm−3 range). Samples were annealed by short (50 ns) high energy pulsed electron beams. Annealing is studied by Rutherford backscattering plus channeling. The In profiles before and after Pulsed Electron Beam Annealing (PEBA) are obtained by SIMS. For the first time, experimentally determined PEBA fluence thresholds for Ge are reported. Values as low as 0.45 J/cm2 are sufficient to anneal a 0.2 μm thick amorphous layer with a 10 keV (mean electron energy) pulse. For fluences higher than 0.6 J/cm2 considerable redistribution of indium occurs. This is quite coherent with liquid phase epitaxy as the annealing mechanism. The profile is fitted with a simple diffusion model with diffusivity in the 10−4 cm2/s range.
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关键词
electron beam
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