10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have beep for the first time. The SiC BJT (chip size: 0.75 cm(2) with an active area of 0.336 cm(2)) conducts a collector current of 10 A (similar to 30 A/cm(2)) with a forward voltage drop of 4.0 V (forced current gain beta(forced): 20) corresponding to a specific on-resistance of 130 m Omega center dot cm(2) at 25 C. The DC current gain, [3, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of similar to 10 kV have been achieved. The 10 kV SiC Darlington transistor pair consists of a 10 A SiC BJT as the output device and a 1 A SiC BJT as the driver. The forward voltage drop of 4.5 V is measured at 10 A of collector current. The DC forced current gain at the collector voltage of 5.0 V was measured to be 440 at room temperature.