Charge Retention Loss in a $\hbox{HfO}_{2}$ Dot Flash Memory via Thermally Assisted Tunneling
IEEE Electron Device Letters(2008)
摘要
The charge loss mechanism in a hafnium oxide (HfO2 ) dielectric dot flash memory is investigated. We measure the temperature and time dependence of a charge loss induced gate leakage current in a large area cell directly. We find that (1) the charge loss is through a top oxide in the cell and (2) the stored charge emission process exhibits an Arrhenius relationship with temperature, as opposed to ...
更多查看译文
关键词
Hafnium oxide,Flash memory,Temperature dependence,Dielectric losses,Dielectric loss measurement,Temperature measurement,Area measurement,Current measurement,Dielectric measurements,Charge measurement
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络