High-field transport in AC thin film electroluminescent devices: theory and experiment

We present a combined experimental and theoretical analysis of the high field transport in ZnS:Mn ACTFEL devices. The theory consists in a first principles calculation of the impact ionization (II) coefficient and then this parameter is used in a drift-diffusion modeling of the carrier transport in such devices in the presence of a high AC field. By comparing the results obtained with our II rate with those from other models previously used important differences for the transferred charge occur. From the experiments we extract the time dependence of the dissipative current.