Nitridation of the stacked poly-Si gate to suppress the boron penetration in pMOS

Electron Device Letters, IEEE, Volume 16, Issue 6, 1995, Pages 248-249.

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Abstract:

Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF/sub 2//sup +/-implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electr...More

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