Nitridation of the stacked poly-Si gate to suppress the boron penetration in pMOS
Electron Device Letters, IEEE, Volume 16, Issue 6, 1995, Pages 248-249.
EI WOS
Abstract:
Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF/sub 2//sup +/-implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electr...More
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