A magnetoluminescence study of GaAs/Al0.25Ga0.75As quantum wells in an inplane magnetic field

A magnetoluminescence study was performed on GaAs/Al0.25Ga0.75As quantum wells (QWs) in a magnetic field parallel with the QW layers. The samples were grown by molecular beam epitaxy with 5 different well thicknesses of 4, 10, 18, 26 and 38 monolayers. The photoluminescence measurement was carried out at 5 K in the magnetic field up to 30 T. The band structure of these QWs in the inplane magnetic field was numerically calculated by the finite element method using an 8-band envelope function approximation. The experimental data and the calculated heavy-hole to conduction band transition energies showed a reasonable agreement. As the well width increases, the energy dispersion with respect to the magnetic field in both experimental and theoretical results decreases first and then increases after a minimum dispersion at 10 monolayers.