Comparison and implications of charge collection measurements in silicon and InGaAs irradiated by energetic protons and neutrons

E. Normand,D. L. Oberg,J. L. Wert,P. P. Majewski,G. A. Woffinden,S. Satoh,K. Sasaki,M. G. Tverskoy, M V. v, N. Goleminov,S. A. Wender,A. Gavron

IEEE Transactions on Nuclear Science（1995）

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摘要

A variety of charge collection measurements by energetic protons and neutrons have been measured and compared. These include deposition in: small silicon junctions, large volume American and Russian silicon surface barrier detectors, and InGaAs photodiodes.

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关键词

Current measurement,Charge measurement,Silicon,Indium gallium arsenide,Energy measurement,Neutrons,Testing,Protons,Laboratories,Photodiodes

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