Correlation of stress-induced leakage current with generated positive trapped charges for ultrathin gate oxide
Electron Devices, IEEE Transactions（1998）
摘要
In this work, the evidence of the stress-induced leakage current related to the stress-generated positive trapped charges is presented and investigated. It is shown that the centroid of the positive trapped charges, which depends on the polarity of the stress current, affects the magnitude of the leakage current. The trapping density of positive charges, which is determined by the final stress applied on the oxide, determines the final level of the leakage currents
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关键词
internal stresses,positive trapped charges,leakage currents,final stress,trapping density,mosfets,mos capacitors,hole traps,stress-induced leakage current,ultrathin gate oxide,mosfet,anisotropic magnetoresistance,leakage current,tunneling,stress induced leakage current,stress,nitrogen,temperature measurement
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