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Spin relaxation of localized electrons in n-type semiconductors
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, no. 11 (2008)
摘要
The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium angular momentum is shown to be limited either by hyperfine interaction, or by spin-orbit interaction i...更多
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