Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch

A trench insulated gate bipolar transistor (IGBT) employing the curved p-well junction and wide cell pitch, which improves the short circuit capability, is proposed and verified by the 2D numerical simulation. The wide cell pitch improves the short circuit immunity of the proposed IGBT due to the reduced current level under the short circuit condition. The curved p-well junction and the carrier stored layer (CSL) move the highly resistive region toward the surface so that the saturation voltage of the proposed IGBT is slightly higher than that of the conventional IGBT. The short circuit withstanding time of the proposed IGBT is 2.4 times higher than that of the conventional one without any increase of the conduction loss.