Single-walled carbon nanotube transistors on an ultra-thin gate dielectric
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS(2006)
摘要
Back-gated single-walled carbon nanotube (SWCNT) transistors were fabricated using a silane-based organic self-assembled monolayer as a gate dielectric on top of a highly doped silicon wafer. These ultrathin layers ensure strong gate coupling and therefore low operation voltages. The source and drain contacts were patterned through conventional electron-beam lithography after deposition of the organic monolayer and the nanotubes. The organic monolayer was found to be stable against an e-beam dose of 300 mu C/cm(2), as reflected by the very low gate leakage current density of 10(-7) A/cm(2) at a gate voltage of 2 V. On this basis, single-electron transistors (SETs) were obtained from individual metallic SWCNTs, which display Coulomb oscillations with a period five times smaller than devices with a 200 nm SiO2 gate dielectric. Moreover, field-effect transistors made from individual semiconducting SWCNTs operate with gate-source voltages of -2 V, show good saturation, small hysteresis (200 mV) as well as a low subthreshold swing (290 mV/dec). (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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关键词
leakage current,silicon wafer,field effect transistor,electron beam lithography,oscillations,self assembled monolayer,single electron transistor
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