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Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, no. 5 (2010): 985-992

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Up to two layers of epitaxial graphene have been grown on the Si-face of 2 in. SiC wafers exhibiting room-temperature Hall mobilities up to 2750 cm(2) V-1 s(-1), measured from ungated, large, 160x200 mu m(2) Hall bars, and up to 4000 cm(2) V-1 s(-1), from top-gated, small, 1x1.5 mu m(2) Hall bars. The growth process involved a combination...更多

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