Preparation Of Epitaxial Pbtio3 Thin-Films By Metalorganic Vapor-Phase Epitaxy Under Reduced Pressure

In this study PbTiO3 thin films were deposited using metalorganic vapor phase epitaxy (MOVPE). Titanium-isopropoxide and tetraethyl-lead were used as the Ti and Ph precursors, and O-2 was the oxidizing gas. A wide range of conditions for preparing high quality PbTiO3 thin film were investigated. The epitaxial PbTiO3 thin films were grown on (001) SrTiO3 substrates at a growth temperature of 650 degrees C and a growth pressure of 15 Torr. The deposited films were examined using electron microprobe analysis, scanning electron microscopy and X-ray diffraction techniques which included the Laue method. The epitaxial nature of the grown PbTiO3 thin films was established.