Thin polyoxide on the top of poly-Si gate to suppress boron penetration for pMOS

Electron Device Letters, IEEE, Volume 16, Issue 5, 1995, Pages 164-165.

Cited by: 6|Views0


A method of using a thin oxide on the top of the poly-Si gate to getter fluorine for BF/sub 2//sup +/ in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the boron penetration through the gate oxide is suppressed. The MOS capacitors fabricated by using this method show less shi...More



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