Analysis of Strained-Si Device including Quantum Effect

Journal of Computational Electronics, Volume 3, Issue 3, 2004, Pages 80-81.

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Abstract:

Strained-Si technologies are actively discussed from both sides of experiments and simulations in recent years as stated in K. Rim et al. (2003) and F. M. Bufler (2003), and with progressive technology scaling, quantum transport also becomes important increasingly. The authors linked the first principle band calculation program to the FUJ...More

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