Infrared And Photoluminescence Studies On Silicon Oxide Formation In Oxygen-Implanted Silicon Annealed Under Enhanced Pressure

Influence of hydrostatic pressure (HP) on the evolution of Si-O bond states during annealing (HT) in implanted (dose 10(15) - 6 x 10(17) at/cm(2)) Si:O structures was studied by monitoring the features of absorption band associated with Si-O-Si asymmetric stretching mode and defect-related photo luminescence (PL) measurements in the near infrared region. It has been stated that high pressure (HP) treatment significantly changes the defect structure in implanted layer at T greater than or equal to 1130 degreesC, resulting in the shift of asymmetric stretching vibration mode associated with Si-O bonds towards lower frequencies. Stimulation role of hydrostatic pressure in the generation of Si-O bonds in Si:O structures implanted with low doses of oxygen atoms (10(15) -10(16) at/cm(2)) and treated at lower temperatures was found.