Probing the onset of strong localization and electron–electron interactions with the presence of a direct insulator–quantum Hall transition

Solid State Communications(2010)

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摘要
We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator–quantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron–electron interaction effects for the observed transition in our study.
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关键词
A. Semiconductor,B. Epitaxy,D. Electron–electron interactions,D. Quantum Hall effect
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