Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With <formula formulatype="inline"><tex Notation="TeX">$ \hbox{Al}_{2}\hbox{O}_{3}

lt;/tex></formula> Passivation

We studied submicrometer (LG = 0.15-0.25 ¿m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al2O3 passivation. The combination of a low-damage gate-recess technology and the low sheet resistance of the InAlN/AlN/GaN structure resulted in HEMTs with a maximum dc output current density of...More