Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With <formula formulatype="inline"><tex Notation="TeX">$ \hbox{Al}_{2}\hbox{O}_{3}
lt;/tex></formula> Passivation

IEEE Electron Device Letters, pp. 904-906, 2009.

Cited by: 81|Bibtex|Views1|DOI:https://doi.org/10.1109/LED.2009.2026718
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Abstract:

We studied submicrometer (LG = 0.15-0.25 ¿m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al2O3 passivation. The combination of a low-damage gate-recess technology and the low sheet resistance of the InAlN/AlN/GaN structure resulted in HEMTs with a maximum dc output current density of...More

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