Electrophotoluminescence of sol-gel derived ZnO film: effect of electric field on near-band-edge photoluminescence
OPTICS EXPRESS, pp. 11434-11439, 2009.
The effect of electric field on near-band-edge (NBE) photoluminescence (PL) of a sol-gel derived ZnO film has been investigated via a SiO2/ZnO/SiOx(x < 2) double-barrier structure on Si under different forward biases. A forward current-voltage curve is characterized by a negative-differential-resistance (NDR) region, which follows a norma...More
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