On the evaluation of performance parameters of MOSFETs with alternative gate dielectrics

This brief discusses a benchmarking methodology for the evaluation of performance parameters (g/sub mmax/ and I/sub dsat/) of MOSFETs with alternative gate dielectrics. It is shown that assuming ideal scaling for either or with electrical oxide thickness (g/sub mmax/ or I/sub dsat/ /spl prop/ T/sub oxinv//sup -/spl alpha// with /spl alpha/ = 1) instead of using experimental scaling trends for a ba...