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Eight-Band Calculations Of Strained Inas/Gaas Quantum Dots Compared With One-, Four-, And Six-Band Approximations
PHYSICAL REVIEW B, no. 12 (1998): 7190-7195
摘要
The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain-dependent k.p Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined. Single-particle bound-state energies and exciton binding energies are computed as functions of island size. Th...更多
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