The Investigation Of The High-K Gd2o3 (Gadolinium Oxide) Interdielectrics Deposited On The Polycrystalline Silicon

The high-k Gd2O3 films deposited on polycrystalline silicon treated with different post rapid thermal annealing (RTA) temperatures were formed as high-k interdielectrics. A combinational electrical and material analysis on the samples was performed to obtain a thorough understanding of annealing effect on the high-k Gd2O3 interdielectrics. The annealing temperature at 900 degrees C was the optimal condition to reduce the defects and interface traps and hence improve material quality to fabricate a well-crystallized film. This high-k Gd2O3 interdielectric shows promise for future generation of nonvolatile memory applications. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3458865] All rights reserved.