High temperature behaviour of GaN-on-Si high power MISHEMT devices

Dirk Wellekens,Rafael Venegas,Xuanwu Kang,Mohammed Zahid,Tian-Li Wu,Denis Marcon,Puneet Srivastava,Marleen Van Hove,Stefaan Decoutere

Solid-State Device Research Conference（2012）

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摘要

The device performance of GaN-on-Si AlGaN/GaN MISHEMT devices with a Si3N4/Al2O3 bi-layer gate dielectric is studied as a function of temperature. In addition to the temperature dependence of the key DC parameters, which are also benchmarked against a silicon VDMOS device, special attention is paid to the behaviour under operating conditions, including thermal stability, switching behaviour and reliability.

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关键词

MIS devices,dielectric properties,gallium compounds,power HEMT,semiconductor device reliability,thermal stability,GaN,VDMOS device,bilayer gate dielectric,high power MISHEMT devices,high temperature behaviour,reliability,switching behaviour,thermal stability

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