Structural And Electrical Properties Of High Temperature Polycrystalline Silicon Films On Molybdenum Substrate

For the photovoltaic application, a technique of high temperature crystallization was proposed to change from amorphous to polycrystalline silicon. We investigated the structural and electrical properties of the poly-Si thin films on Molybdenum (Mo) substrate using a direct resistive heating process. The hydrogenated amorphous silicon films were crystallized in the temperature range of 750 degrees C to 1050 degrees C. As the crystallization temperature increases, the intensity of the peaks for (111) orientation has strongly observed. Improvement of the crystallinity over 75% has been noticed. Photo conductivity and dark conductivity decreased with the increase in substrate temperature.