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Topological p-n junction
AIP Conference Proceedings, no. 23 (2013): 187.0-+
WOS SCOPUS
摘要
We propose to form a junction between p- and n-type on the surface of an ideal topological insulator (Bi1-xSbx)(2)Te-3, in which carrier type and density are locally controlled by composition graded doping or electrical gating. Such topological p-n junction are promising for possible device application. A single gapless chiral edge state ...更多
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