Temperature-dependent resistive switching of amorphous carbon/silicon heterojunctions

Amorphous graphite-like carbon (a-GLC) films were deposited on n-Si substrates by pulsed laser deposition (PLD) technique to form a-GLC/Si heterojunctions. The a-GLC/Si heterojunctions deposited at 300K showed nonvolatile and reproducible resistive switching behavior at low temperatures (80–150K). Applied proper bias voltage, the resistance of the heterojunctions could be switched from one state to the other state. The ratio of the high/low resistances could be greater than 10. This phenomenon might be attributed to the effects of the reverse barrier and the large density of traps in a-GLC film on the carriers. This a-GLC/Si heterojunctions might provide a new approach to fabricate higher density and low-temperature functional memory.