Dislocation and elastic strain in an InN film characterized by synchrotron radiation X-ray diffraction and Rutherford backscattering/channeling

Dislocation information and strain-related tetragonal distortion as well as crystalline qualities of a 2-mu m-thick InN film grown by molecular beam epitaxy (MBE) are characterized by Rutherford backscattering/channeling (RBS/C) and synchrotron radiation x-ray diffraction (SR-XRD). The minimum yield chi(min) = 2.5% deduced from the RBS/C results indicates a fairly good crystalline quality. From the SR-XRD results, we obtain the values of the screw and edge densities to be rho(screw) = 7.0027 x 10(9) and rho(edge) = 8.6115 x 10(9) cm(-2), respectively. The tetragonal distortion of the sample is found to be -0.27% by angular scans, which is close to the -0.28% derived by SR-XRD. The value of |e(perpendicular to)/e(parallel to)| = 0.6742 implies that the InN layer is much stiffer along the.. axis than that along the c axis, where e(parallel to) is the parallel elastic strain, and e(perpendicular to) is the perpendicular elastic strain. Photoluminescence results reveal a main peak of 0.653 eV with the linewidth of 60meV, additional shoulder band could be due to impurities and related defects.