Improved memory performance of metal-oxide-nitride-oxide-silicon by annealing the SiO2 tunnel layer in different nitridation atmospheres

Journal of Semiconductors, Volume 34, Issue 11, 2013, Pages null-null.

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Abstract:

Metal-oxide-nitride-oxide-silicon (MONOS) capacitors with thermally grown SiO2 as the tunnel layer are fabricated, and the effects of different ambient nitridation (NH3, NO and N2O) on the characteristics of the memory capacitors are investigated. The experimental results indicate that the device with tunnel oxide annealed in NO ambient e...More

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