Adsorption on epitaxial graphene on SiC(0001)
Journal of Materials Research(2014)
摘要
Graphene, a single atomic sheet of sp 2 -bonded carbon atoms arranged in a honeycomb lattice, exhibits extraordinary electrical and mechanical properties, attracting much attention in both academia and industry. The preparation of high quality large-area graphene and the tuning of graphene electronic properties are important topics in this field. In this feature paper, we review our recent work on epitaxial graphene (EG) on SiC(0001). First, we introduce the bottom-up growth mechanism of the first few EG layers on SiC(0001), and the modification of graphene electronic properties by means of surface transfer doping with electron withdrawing materials (F 4 -TCNQ and MoO 3 ). Next, we summarize the adsorption behaviors of organic (PTCDA, ClAlPc, and C 60 F 48 ) and inorganic (bismuth) materials on EG/SiC(0001). Finally, as an example of tuning the electronic properties of graphene by reducing its dimensionality, we demonstrate the molecular self-assembly of atomically precise armchair graphene nanoribbons with varying widths and electronic structures.
更多查看译文
关键词
self-assembly,nanostructure,scanning tunneling microscopy (STM)
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络