Power characteristics of SiGe heterojunction bipolar transistor at 900 MHz

The microwave power performance of the SiGe heterojunction bipolar transistor fabricated by quasi-washed-emitter-base process, is investigated. The cutoff frequency of the SiGe HBT is 7.5 GHz at collector-emitter voltage V CE of 4V and collector current I c of 300 mA. In common emitter configuration and class C operation, the SiGe heterojunction bipolar transistor with continuous wave output power of 5 W and collector conversion efficiency of 63% and power gain of 7.3 dB is obtained at the frequency of 900 MHz.