30 finger microwave power SiGe HBT with 23 V BVCBO and fT 7 GHz

With modified necessary steps for SiGe implementation, multi-finger power SiGe HBT devices are fabricated in a CMOS process line with 125 mm wafer. The devices show quite high BVCBO 23 V. The current gain is very stable over a wide IC. The fT is up to 7 GHz at a DC bias of IC=40 mA and VCE=8 V, which show high current handling capability. Under continuous conditions in B operation, the 31 dBm output power, 10 dB Gp, and 33.3% of PAE are obtained at 3 GHz. Based on extensive tests, it has been demonstrated that the yield on a wafer is up to 85%, which means that the research results are capable of commercialization.