A Novel Approach To Evaluate The Carrier Effective Mass In Gesi Quantum Dot Structure

Zheng Yang,Yi Shi,Jianlin Liu,Bo Yan,Rong Zhang,Youdou Zheng,KangLong Wang

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS（2004）

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摘要

Carrier effective mass in the self-assembled GeSi quantum dots (QDs.) grown by a solid-source molecular beam epitaxy (MBE) system has been studied with temperature-dependent photoluminescence (PL) and Raman scattering measurements. The temperature-dependence of the PL was fitted by the combination of Arrhenius and Berthelot type functions, from which a novel approach to evaluate the carrier effective mass has been proposed.

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关键词

raman spectra,quantum dot,effective mass,molecular beam epitaxy,photoluminescence,raman scattering

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