New aspects of HCI test for ultra-short channel MOSFET device

Hot carrier injection (HCI) test for ultra short channel nMOSFET device is studied. The experiment data of short channel device (75-90nm), which does not fit well with conventional degradation power law, will bring large error in lifetime prediction. This phenomenon has happened mostly under low V dS stress condition. A new model is presented to better fit the degradation curve. It is observed that the substrate current peak under low V dS stress voltage cannot be found in ultra short channel device. Devices with different channel length and V dS stress voltage are studied to understand the relations between substrate current peak, channel length and stress electric field.