Fabrication of Ge-dots/Si multilayered structures by combination of low-pressure CVD and Ni-induced lateral crystallization

Yi Shi, Bin Yan,L Pu,K J Zhang,J M Zhu,G B Ma,Ping Han,Rongting Zhang,Y D Zheng

Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest（2006）

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diffraction,crystallization,crystallisation,germanium,silicon,transmission electron microscopy,fabrication,low pressure,quantum dot,lpcvd,doping,temperature,optoelectronic devices,chemical vapour deposition

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