Design of 60-GHz LNA in 0.13-μm SiGe BiCMOS

Nanjing（2008）

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摘要

This paper presents the design of the matching network of a 60-GHz high-gain LNA. Through analyzing commonly used structure, a simplified input matching network was designed and an inter-stage matching network was proposed to improve gain and reduce noise. Simulated in 0.13-μm SiGe BiCMOS technology, the LNA provides a gain of 20 dB with a noise figure of 5 dB while consuming 3 mA from a 2.5-V supply.

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关键词

lna,noise figure 5 db,sige bicmos technology,sige,low noise amplifiers,gain 20 db,inter-stage matching network,bicmos integrated circuits,frequency 60 ghz,ge-si alloys,voltage 2.5 v,size 0.13 mum,input matching network,millimetre wave amplifiers,impedance matching,parasitic capacitance,frequency,bipolar transistors,circuit topology,noise figure

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